Emission from defects in thin gan epilayers grown on vicinal 4H-SiC substrates

التفاصيل البيبلوغرافية
العنوان: Emission from defects in thin gan epilayers grown on vicinal 4H-SiC substrates
المؤلفون: Xu, S.J., Wang, H.J., Cheung, S.H., Li, Q., Dai, X.Q., Xie, M.H., Tong, S.Y.
المصدر: 2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Optoelectronic and microelectronic materials and device Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on. :95-98 2002
Relation: 2002 Conference on Optoelectronic and Microelectron Materials and Devices
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780375718
9780780375710
تدمد:10972137
DOI:10.1109/COMMAD.2002.1237201