مؤتمر
SiGe:C BiCMOS technology with 3.6 ps gate delay
| العنوان: | SiGe:C BiCMOS technology with 3.6 ps gate delay |
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| المؤلفون: | Rucker, H., Heinemann, B., Barth, R., Bolze, D., Drews, J., Haak, U., Hoppner, W., Knoll, D., Kopke, K., Marschmeyer, S., Richter, H.H., Schley, P., Schmidt, D., Scholz, R., Tillack, B., Winkler, W., Wulf, H.-E., Yamamoto, Y. |
| المصدر: | IEEE International Electron Devices Meeting 2003 Electron devices IEDM'03 Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International. :5.3.1-5.3.4 2003 |
| Relation: | IEEE International Electron Devices Meeting 2003 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780378725 9780780378728 |
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| DOI: | 10.1109/IEDM.2003.1269180 |