مؤتمر
IEGT design criterion for reducing EMI noise [injection enhancement gate transistor]
| العنوان: | IEGT design criterion for reducing EMI noise [injection enhancement gate transistor] |
|---|---|
| المؤلفون: | Yamaguchi, M., Omura, I., Urano, S., Umekawa, S., Tanaka, M., Okuno, T., Tsunoda, T., Ogura, T. |
| المصدر: | 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Power semiconductor devices and ICs Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on. :115-118 2004 |
| Relation: | Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's |
| قاعدة البيانات: | IEEE Xplore Digital Library |
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