مؤتمر
Dual workfunction Ni-Silicide/HfSiON gate stacks by phase-controlled full-silicidation (PC-FUSI) technique for 45nm-node LSTP and LOP devices
| العنوان: | Dual workfunction Ni-Silicide/HfSiON gate stacks by phase-controlled full-silicidation (PC-FUSI) technique for 45nm-node LSTP and LOP devices |
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| المؤلفون: | Takahashi, K., Manabe, K., Ikarashi, T., Ikarashi, N., Hase, T., Yoshihara, T., Watanabe, H., Tatsumi, T., Mochizuki, Y. |
| المصدر: | IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :91-94 2004 |
| Relation: | 2004 International Electron Devices Meeting |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780386841 9780780386846 |
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| DOI: | 10.1109/IEDM.2004.1419074 |