مؤتمر
SiGe HBT technology with f/sub max//f/sub T/=350/300 GHz and gate delay below 3.3 ps
| العنوان: | SiGe HBT technology with f/sub max//f/sub T/=350/300 GHz and gate delay below 3.3 ps |
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| المؤلفون: | Khater, M., Rieh, J.-S., Adam, T., Chinthakindi, A., Johnson, J., Krishnasamy, R., Meghelli, M., Pagette, F., Sanderson, D., Schnabel, C., Schonenberg, K.T., Smith, P., Stein, K., Strieker, A., Jeng, S.-J., Ahlgren, D., Freeman, G. |
| المصدر: | IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :247-250 2004 |
| Relation: | 2004 International Electron Devices Meeting |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780386841 9780780386846 |
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| DOI: | 10.1109/IEDM.2004.1419122 |