Depletion/enhancement mode InAlAs/InGaAs-MOSHEMTs with nm-thin gate insulating layers formed by oxidation of the InAlAs layer

التفاصيل البيبلوغرافية
العنوان:	Depletion/enhancement mode InAlAs/InGaAs-MOSHEMTs with nm-thin gate insulating layers formed by oxidation of the InAlAs layer
المؤلفون:	Nakamura, K., Paul, N.C., Takebe, M., Iiyama, K., Takamiya, S.
المصدر:	16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. Indium Phosphide and Related Materials Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on. :191-194 2004
Relation:	2004 International Conference on Indium Phosphide and Related Materials. 16th IPRM
قاعدة البيانات:	IEEE Xplore Digital Library

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