Application of low pressure silicon epitaxy to subnanosecond bipolar logic LSIS

التفاصيل البيبلوغرافية
العنوان: Application of low pressure silicon epitaxy to subnanosecond bipolar logic LSIS
المؤلفون: Ogirima, M., Saida, H., Hayasaka, A., Anzai, A., Nitta, T., Kuroda, S.
المصدر: 1980 International Electron Devices Meeting IEDM Tech. Dig. Electron Devices Meeting, 1980 International. :54-57 1980
Relation: International Electron Devices Meeting 1980
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
DOI:10.1109/IEDM.1980.189751