Improvement of non volatile memory tunnel oxide robustness and integrity by design optimization of the memory cell

التفاصيل البيبلوغرافية
العنوان: Improvement of non volatile memory tunnel oxide robustness and integrity by design optimization of the memory cell
المؤلفون: Ackaert, J., de Backer, E., Lowe, A., Yao, T., Goessens, C., Greenwood, B., Verpoort, P.
المصدر: 2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005. Integrated circuit design and technology Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on. :103-106 2005
Relation: 2005 International Conference on Integrated Circuit Design and Technology
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780390814
9780780390812
تدمد:23813555
DOI:10.1109/ICICDT.2005.1502602