مؤتمر
Improvement of non volatile memory tunnel oxide robustness and integrity by design optimization of the memory cell
العنوان: | Improvement of non volatile memory tunnel oxide robustness and integrity by design optimization of the memory cell |
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المؤلفون: | Ackaert, J., de Backer, E., Lowe, A., Yao, T., Goessens, C., Greenwood, B., Verpoort, P. |
المصدر: | 2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005. Integrated circuit design and technology Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on. :103-106 2005 |
Relation: | 2005 International Conference on Integrated Circuit Design and Technology |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780390814 9780780390812 |
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تدمد: | 23813555 |
DOI: | 10.1109/ICICDT.2005.1502602 |