Channel Engineering Study for 50 nm P-Channel MOSFET

التفاصيل البيبلوغرافية
العنوان: Channel Engineering Study for 50 nm P-Channel MOSFET
المؤلفون: Guegan, G., Souil, D., Deleonibus, S., Tedesco, S., Laviron, C., Previtali, P., Nier, M.E.
المصدر: 32nd European Solid-State Device Research Conference Solid-State Device Research Conference, 2002. Proceeding of the 32nd European. :119-122 2002
Relation: 32nd European Solid-State Device Research Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:8890084782
9788890084782
DOI:10.1109/ESSDERC.2002.194884