مؤتمر
n-channel, p-channel, depletion, enhancement GaAs metal-insulator-semiconductor field effect transistors with gate films formed by oxi-nitridation of GaAs surfaces
| العنوان: | n-channel, p-channel, depletion, enhancement GaAs metal-insulator-semiconductor field effect transistors with gate films formed by oxi-nitridation of GaAs surfaces |
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| المؤلفون: | Paul, N.C., Takebe, M., Tametou, M., Seto, H., Fujino, Y., Iiyama, K., Takamiya, S. |
| المصدر: | International Conference on Indium Phosphide and Related Materials, 2005 Indium Phosphate and Related Materials Indium Phosphide and Related Materials, 2005. International Conference on. :246-249 2005 |
| Relation: | 2005 International Conference on Indium Phosphate And Related Materials |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780388917 9780780388918 |
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| تدمد: | 10928669 |
| DOI: | 10.1109/ICIPRM.2005.1517469 |