Measurements and modeling of intrinsic fluctuations in MOSFET threshold voltage

التفاصيل البيبلوغرافية
العنوان: Measurements and modeling of intrinsic fluctuations in MOSFET threshold voltage
المؤلفون: Keshavarzi, A., Schrom, G., Tang, S., Ma, S., Bowman, K., Tyagi, S., Zhang, K., Linton, T., Hakim, N., Duvall, S., Brews, J., De, V.
المصدر: ISLPED '05. Proceedings of the 2005 International Symposium on Low Power Electronics and Design, 2005. Low power electronics and design Low Power Electronics and Design, 2005. ISLPED '05. Proceedings of the 2005 International Symposium on. :26-29 2005
Relation: ISLPED '05. Proceedings of the 2005 International Symposium on Low Power Electronics and Design
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:1595931376
9781595931375
DOI:10.1145/1077603.1077611