مؤتمر
Noise characteristics of 340 nm and 280 in GaN-based light emitting diodes
العنوان: | Noise characteristics of 340 nm and 280 in GaN-based light emitting diodes |
---|---|
المؤلفون: | Sawyer, S., Rumyantsev, S.L., Pala, N., Shur, M.S., Bilenko, Y., Gaska, R., Kosterin, P.V., Salzberg, B.M. |
المصدر: | Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. High Performance Devices High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on. :78-83 2004 |
Relation: | High Performance Devices. Proceedings of the 2004 IEEE Lester Eastman Conference on High Performance Devices |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 981256196X 9789812561961 |
---|---|
DOI: | 10.1109/LECHPD.2004.1549675 |