Dependence of pmos metal work functions on surface conditions of high-k gate dielectrics

التفاصيل البيبلوغرافية
العنوان: Dependence of pmos metal work functions on surface conditions of high-k gate dielectrics
المؤلفون: Jha, R., Bongmook Lee, Bei Chen, Novak, S., Majhi, P., Misra, V.
المصدر: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :43-46 2005
Relation: International Electron Devices Meeting 2005
قاعدة البيانات: IEEE Xplore Digital Library