مؤتمر
45-nm node CMOS integration with a novel STI structure and full-NCS/Cu interlayers for low-operation-power (lop) applications
| العنوان: | 45-nm node CMOS integration with a novel STI structure and full-NCS/Cu interlayers for low-operation-power (lop) applications |
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| المؤلفون: | Okuno, M., Okabe, K., Sakuma, T., Suzuki, K., Miyashita, T., Yao, T., Morioka, H., Terahara, M., Kojima, Y., Watatani, H., Sugimoto, K., Watanabe, T., Hayami, Y., Mori, T., Kubo, T., Iba, Y., Sugiura, I., Fukutome, H., Morisaki, Y., Minakata, H., Ikeda, K., Kishii, S., Shimizu, N., Tanaka, T., Asai, S., Nakaishi, M., Fukuyama, S., Tsukune, A., Yamabe, M., Hanyuu, I., Miyajima, M., Kase, M., Watanabe, K., Satoh, S., Sugii, T. |
| المصدر: | IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :52-55 2005 |
| Relation: | International Electron Devices Meeting 2005 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 078039268X 9780780392687 |
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| تدمد: | 01631918 2156017X |
| DOI: | 10.1109/IEDM.2005.1609264 |