مؤتمر
Inverted T channel FET (ITFET) - Fabrication and characteristics of vertical-horizontal, thin body, multi-gate, multi-orientation devices, ITFET SRAM bit-cell operation. A novel technology for 45nm and beyond CMOS.
| العنوان: | Inverted T channel FET (ITFET) - Fabrication and characteristics of vertical-horizontal, thin body, multi-gate, multi-orientation devices, ITFET SRAM bit-cell operation. A novel technology for 45nm and beyond CMOS. |
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| المؤلفون: | Mathew, L., Sadd, M., Kalpat, S., Zavala, M., Stephens, T., Mora, R., Bagchi, S., Parker, C., Vasek, J., Sing, D., Shimer, R., Prabhu, L., Workman, G.O., Ablen, G., Shi, Z., Saenz, J., Min, B., Burnett, D., Nguyen, B.-Y., Mogab, J., Chowdhury, M.M., Zhang, W., Fossum, J.G. |
| المصدر: | IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :713-716 2005 |
| Relation: | International Electron Devices Meeting 2005 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 078039268X 9780780392687 |
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| تدمد: | 01631918 2156017X |
| DOI: | 10.1109/IEDM.2005.1609452 |