مؤتمر
High performance single grain si tfts inside a location-controlled grain by /spl mu/-czochralski process with capping layer
| العنوان: | High performance single grain si tfts inside a location-controlled grain by /spl mu/-czochralski process with capping layer |
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| المؤلفون: | Vikas, R., Ishihara, R., Hiroshima, Y., Abe, D., Inoue, S., Shimoda, T., Metselaar, J.W., Beenakker, C.I.M. |
| المصدر: | IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :919-922 2005 |
| Relation: | International Electron Devices Meeting 2005 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 078039268X 9780780392687 |
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| تدمد: | 01631918 2156017X |
| DOI: | 10.1109/IEDM.2005.1609509 |