2-bit poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicate

التفاصيل البيبلوغرافية
العنوان: 2-bit poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicate
المؤلفون: Yu-Hsien Lin, Chao-Hsin Chien, Tung-Hung Chou, Tien-Sheng Chao, Chun-Yen Chang, Tan-Fu Lei
المصدر: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :927-930 2005
Relation: International Electron Devices Meeting 2005
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:078039268X
9780780392687
تدمد:01631918
2156017X
DOI:10.1109/IEDM.2005.1609511