دورية أكاديمية
High-Performance Uniaxially Strained SiGe-on-Insulator pMOSFETs Fabricated by Lateral-Strain-Relaxation Technique
| العنوان: | High-Performance Uniaxially Strained SiGe-on-Insulator pMOSFETs Fabricated by Lateral-Strain-Relaxation Technique |
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| المؤلفون: | Irisawa, T., Numata, T., Tezuka, T., Usuda, K., Hirashita, N., Sugiyama, N., Toyoda, E., Takagi, S.-I. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 53(11):2809-2815 Nov, 2006 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2006.884078 |