High temperature operation (185 degrees C) of InGaAs/GaAs/InGaP quantum well lasers

التفاصيل البيبلوغرافية
العنوان: High temperature operation (185 degrees C) of InGaAs/GaAs/InGaP quantum well lasers
المؤلفون: Chen, Y.K., Wu, M.C., Kuo, J.M., Chin, M.A., Sergent, A.M.
المصدر: International Electron Devices Meeting 1991 [Technical Digest] Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International. :615-618 1991
Relation: 1991 International Electron Devices Meeting
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780302435
9780780302433
تدمد:01631918
DOI:10.1109/IEDM.1991.235395