مؤتمر
High temperature operation (185 degrees C) of InGaAs/GaAs/InGaP quantum well lasers
العنوان: | High temperature operation (185 degrees C) of InGaAs/GaAs/InGaP quantum well lasers |
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المؤلفون: | Chen, Y.K., Wu, M.C., Kuo, J.M., Chin, M.A., Sergent, A.M. |
المصدر: | International Electron Devices Meeting 1991 [Technical Digest] Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International. :615-618 1991 |
Relation: | 1991 International Electron Devices Meeting |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780302435 9780780302433 |
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تدمد: | 01631918 |
DOI: | 10.1109/IEDM.1991.235395 |