Sub-mA threshold operation of lambda =1.5 mu m strained InGaAs multiple quantum well lasers grown on

التفاصيل البيبلوغرافية
العنوان: Sub-mA threshold operation of lambda =1.5 mu m strained InGaAs multiple quantum well lasers grown on
المؤلفون: Thijs, P.J.A., Binsma, J.J.M., Tiemeijer, L.F., Slootweg, R.W.M., van Roijen, R., van Dongen, T.
المصدر: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels Indium Phosphide and Related Materials, 1992., Fourth International Conference on. :461-464 1992
Relation: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780305221
9780780305229
DOI:10.1109/ICIPRM.1992.235564