مؤتمر
Sub-mA threshold operation of lambda =1.5 mu m strained InGaAs multiple quantum well lasers grown on
العنوان: | Sub-mA threshold operation of lambda =1.5 mu m strained InGaAs multiple quantum well lasers grown on |
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المؤلفون: | Thijs, P.J.A., Binsma, J.J.M., Tiemeijer, L.F., Slootweg, R.W.M., van Roijen, R., van Dongen, T. |
المصدر: | LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels Indium Phosphide and Related Materials, 1992., Fourth International Conference on. :461-464 1992 |
Relation: | LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780305221 9780780305229 |
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DOI: | 10.1109/ICIPRM.1992.235564 |