مؤتمر
InGaAs/InP and InAsP/InP quantum wells on GaAs (100) with graded In/sub x/Ga/sub 1-x/As or In/sub 1-y/Ga/sub y/P buffer layers grown by gas-source molecular beam epitaxy
| العنوان: | InGaAs/InP and InAsP/InP quantum wells on GaAs (100) with graded In/sub x/Ga/sub 1-x/As or In/sub 1-y/Ga/sub y/P buffer layers grown by gas-source molecular beam epitaxy |
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| المؤلفون: | Tu, C.W., Chin, T.P., Chang, J.C.P., Kavanagh, K.L., Otsuka, N. |
| المصدر: | Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Indium phosphide and related materials Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on. :543-546 1994 |
| Relation: | Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 078031476X 9780780314764 |
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| DOI: | 10.1109/ICIPRM.1994.328289 |