High resolution X-ray diffraction and transmission electron microscopy investigation on As and P incorporation in MOCVD and CBE grown In(GaAs)P/InP 'false' multi quantum wells

التفاصيل البيبلوغرافية
العنوان: High resolution X-ray diffraction and transmission electron microscopy investigation on As and P incorporation in MOCVD and CBE grown In(GaAs)P/InP 'false' multi quantum wells
المؤلفون: Ferrari, C., Lazzarini, L., Salviati, G., Gastaldi, L., Taiarol, F., Schiavini, G., Rigo, C.
المصدر: 1993 (5th) International Conference on Indium Phosphide and Related Materials Indium phosphide and related materials Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on. :199-202 1993
Relation: 1993 (5th) International Conference on Indium Phosphide and Related Materials
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780309936
9780780309937
DOI:10.1109/ICIPRM.1993.380675