Highly Scalable and Reliable Multi-bit/cell Nitride Trapping Nonvolatile Memory Using Enhanced ANS-ONO Process with A Nitridized Interface

التفاصيل البيبلوغرافية
العنوان:	Highly Scalable and Reliable Multi-bit/cell Nitride Trapping Nonvolatile Memory Using Enhanced ANS-ONO Process with A Nitridized Interface
المؤلفون:	Shih, Y.H., Lai, E.K., Hsieh, J.Y., Hsu, T.H., Wu, M.D., Lu, C.P., Ni, K.P., Chou, T.Y., Yang, L.W., Hsieh, K.Y., Liaw, M.H., Lu, W.P., Chen, K.C., Ku, Joseph, Ni, F.L., Liu, Rich, Lu, Chih-Yuan
المصدر:	2006 International Electron Devices Meeting Electron Devices Meeting, 2006. IEDM '06. International. :1-4 Dec, 2006
Relation:	2006 International Electron Devices Meeting
قاعدة البيانات:	IEEE Xplore Digital Library