High Speed and Highly Cost effective 72M bit density S3 SRAM Technology with Doubly Stacked Si Layers, Peripheral only CoSix layers and Tungsten Shunt W/L Scheme for Standalone and Embedded Memory

التفاصيل البيبلوغرافية
العنوان: High Speed and Highly Cost effective 72M bit density S3 SRAM Technology with Doubly Stacked Si Layers, Peripheral only CoSix layers and Tungsten Shunt W/L Scheme for Standalone and Embedded Memory
المؤلفون: Jung, Soon -Moon, Lim, Hoon, Yeo, Chadong, Kwak, Kunho, Son, Byoungkeun, Park, Hanbyung, Na, Jonghoon, Shim, Jae-Joo, Hong, Changmin, Kim, Kinam
المصدر: 2007 IEEE Symposium on VLSI Technology VLSI Technology, 2007 IEEE Symposium on. :82-83 Jun, 2007
Relation: 2007 IEEE Symposium on VLSI Technology
قاعدة البيانات: IEEE Xplore Digital Library