مؤتمر
High Performance Sub-40 nm Bulk CMOS with Dopant Confinement Layer (DCL) technique as a Strain Booster
| العنوان: | High Performance Sub-40 nm Bulk CMOS with Dopant Confinement Layer (DCL) technique as a Strain Booster |
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| المؤلفون: | Ohta, H., Tamura, N., Fukutome, H., Tajima, M., Okabe, K., Hatada, A., Ikeda, K., Ohkoshi, K., Mori, T., Sukegawa, K., Satoh, S., Sugii, T. |
| المصدر: | 2007 IEEE International Electron Devices Meeting Electron Devices Meeting, 2007. IEDM 2007. IEEE International. :289-292 Dec, 2007 |
| Relation: | 2007 IEEE International Electron Devices Meeting |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424415076 9781424415083 |
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| تدمد: | 01631918 2156017X |
| DOI: | 10.1109/IEDM.2007.4418925 |