Effects of nitrogen incorporation by plasma immersion ion implantation on electrical characteristics of high-k gated MOS devices

التفاصيل البيبلوغرافية
العنوان:	Effects of nitrogen incorporation by plasma immersion ion implantation on electrical characteristics of high-k gated MOS devices
المؤلفون:	Fu, C.H., Chang-Liao, K.S., Chuang, H.C., Wang, T.K., Huang, S.F., Tsai, W.F., Ai, C.F.
المصدر:	2007 International Semiconductor Device Research Symposium Semiconductor Device Research Symposium, 2007 International. :1-2 Dec, 2007
Relation:	2007 International Semiconductor Device Research Symposium
قاعدة البيانات:	IEEE Xplore Digital Library

الوصف
ردمك:	9781424418916 9781424418923
DOI:	10.1109/ISDRS.2007.4422241