Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study

التفاصيل البيبلوغرافية
العنوان:	Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study
المؤلفون:	Zhiya Zhao, Lantz, Kevin R., Changhyun Yi, Stiff-Roberts, Adrienne D.
المصدر:	2007 Quantum Electronics and Laser Science Conference Quantum Electronics and Laser Science Conference, 2007. QELS '07. :1-2 May, 2007
Relation:	2007 Quantum Electronics and Laser Science Conference
قاعدة البيانات:	IEEE Xplore Digital Library

الوصف
ردمك:	9781557528346
DOI:	10.1109/QELS.2007.4431210