مؤتمر
Investigation of impact ionization from InxGa1-xAs to InAs Channel HEMTs for high speed and low power applications
العنوان: | Investigation of impact ionization from InxGa1-xAs to InAs Channel HEMTs for high speed and low power applications |
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المؤلفون: | Kuo, Chien-I, Hsu, Heng-Tung, Chang, Edward Yi, Chang, Chia-Ta, Chang, Chia-Yuan, Miyamoto, Yasuyuki |
المصدر: | 2008 20th International Conference on Indium Phosphide and Related Materials Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on. :1-4 May, 2008 |
Relation: | 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9781424422586 9781424422593 |
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تدمد: | 10928669 |
DOI: | 10.1109/ICIPRM.2008.4702949 |