Investigation of impact ionization from InxGa1-xAs to InAs Channel HEMTs for high speed and low power applications

التفاصيل البيبلوغرافية
العنوان: Investigation of impact ionization from InxGa1-xAs to InAs Channel HEMTs for high speed and low power applications
المؤلفون: Kuo, Chien-I, Hsu, Heng-Tung, Chang, Edward Yi, Chang, Chia-Ta, Chang, Chia-Yuan, Miyamoto, Yasuyuki
المصدر: 2008 20th International Conference on Indium Phosphide and Related Materials Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on. :1-4 May, 2008
Relation: 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781424422586
9781424422593
تدمد:10928669
DOI:10.1109/ICIPRM.2008.4702949