Bottom Nitridation Engineering of Multi-Nitridation ONO Interpoly Dielectric for Highly Reliable and High Performance NAND Flash Memory

التفاصيل البيبلوغرافية
العنوان: Bottom Nitridation Engineering of Multi-Nitridation ONO Interpoly Dielectric for Highly Reliable and High Performance NAND Flash Memory
المؤلفون: Liu, C. H., Lin, Y. M., Yin, D. Y., Tseng, G. H., Liaw, H. W., Wei, H. C., Chen, S. H., Chao, C. M., Hwang, H. P., Pittikoun, S., Aritome, S.
المصدر: 2009 IEEE International Memory Workshop Memory Workshop, 2009. IMW '09. IEEE International. :1-2 May, 2009
Relation: 2009 IEEE International Memory Workshop (IMW)
قاعدة البيانات: IEEE Xplore Digital Library