Transient behaviors in partially depleted thin film SOI devices

التفاصيل البيبلوغرافية
العنوان: Transient behaviors in partially depleted thin film SOI devices
المؤلفون: Shin, H.C., Lim, I.S., Racanelli, M., Huang, W.M., Foerstner, J., Hwang, B.-Y., Whitfield, J., Shin, H., Wetteroth, T., Hong, S., Wilson, S., Cheng, S.
المصدر: 1995 IEEE International SOI Conference Proceedings SOI conference SOI Conference, 1995. Proceedings., 1995 IEEE International. :4-5 1995
Relation: 1995 IEEE International SOI Conference Proceedings
قاعدة البيانات: IEEE Xplore Digital Library