دورية أكاديمية

Monolithic integration of AlGaAs/GaAs HBT and GaAs junction-gate floated electron channel field effect transistor using selective MOCVD growth

التفاصيل البيبلوغرافية
العنوان: Monolithic integration of AlGaAs/GaAs HBT and GaAs junction-gate floated electron channel field effect transistor using selective MOCVD growth
المؤلفون: Hyunchol Shin, Jeong-Hwan Son, Young-Se Kwon
المصدر: IEEE Microwave and Guided Wave Letters IEEE Microw. Guid. Wave Lett. Microwave and Guided Wave Letters, IEEE. 6(9):317-319 Sep, 1996
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
تدمد:10518207
15582329
DOI:10.1109/75.535831