مؤتمر
Fabrication and characterization of buried-gate fin and recess channel MOSFET for high performance and low GIDL current
| العنوان: | Fabrication and characterization of buried-gate fin and recess channel MOSFET for high performance and low GIDL current |
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| المؤلفون: | Song, Jae Young, Kim, Jong Pil, Kim, Sang Wan, Oh, Jeong-Hoon, Ryoo, Kyung-Chang, Sun, Min-Chul, Kim, Garam, Kim, Hyun Woo, Chang, Jisoo, Jung, Sunghun, Shin, Hyungcheol, Park, Byung-Gook |
| المصدر: | 2009 International Semiconductor Device Research Symposium Semiconductor Device Research Symposium, 2009. ISDRS '09. International. :1-2 Dec, 2009 |
| Relation: | 2009 International Semiconductor Device Research Symposium (ISDRS) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424460304 9781424460311 |
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| DOI: | 10.1109/ISDRS.2009.5378069 |