The Influence of Technological Parameters on Ultra-Short Gate SI-NMOS Transistor Performances

التفاصيل البيبلوغرافية
العنوان: The Influence of Technological Parameters on Ultra-Short Gate SI-NMOS Transistor Performances
المؤلفون: Charef, M., Dessenne, F., Thobel, J.L., Baudry, L., Fauquembergue, R.
المصدر: ESSDERC '93: 23rd European solid State Device Research Conference Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European. :625-628 Sep, 1993
Relation: Proceedings of the 23rd European Solid State Device Research Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:2863321358
9782863321355
DOI:10.1007/978-3-7091-6657-4_75