Process and Model of Short-Gate Diffused InGaAs JFET's for Integrated Pin - FET Photodetector

التفاصيل البيبلوغرافية
العنوان: Process and Model of Short-Gate Diffused InGaAs JFET's for Integrated Pin - FET Photodetector
المؤلفون: Nguyen, L., Allovon, M., Blanconnier, P., Bourdon, B., Caquot, E., Scavennec, A.
المصدر: ESSDERC '87: 17th European Solid State Device Research Conference Solid State Device Research Conference, 1987. ESSDERC '87. 17th European. :943-946 Sep, 1987
Relation: 17th European Solid State Device Research Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0444704779
9780444704771