دورية أكاديمية
Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures
| العنوان: | Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures |
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| المؤلفون: | Hofstetter, D., Baumann, E., Giorgetta, F. R., Theron, R., Wu, H., Schaff, W. J., Dawlaty, J., George, P. A., Eastman, L. F., Rana, F., Kandaswamy, P. K., Guillot, F., Monroy, E. |
| المصدر: | Proceedings of the IEEE Proc. IEEE Proceedings of the IEEE. 98(7):1234-1248 Jul, 2010 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189219 15582256 |
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| DOI: | 10.1109/JPROC.2009.2035465 |