دورية أكاديمية

Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

التفاصيل البيبلوغرافية
العنوان: Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources
المؤلفون: Zhang, Z., Pagette, F., D'Emic, C., Yang, B., Lavoie, C., Zhu, Y., Hopstaken, M., Maurer, S., Murray, C., Guillorn, M., Klaus, D., Bucchignano, J., Bruley, J., Ott, J., Pyzyna, A., Newbury, J., Song, W., Chhabra, V., Zuo, G., Lee, K-L., Ozcan, A., Silverman, J., Ouyang, Q., Park, D-G., Haensch, W., Solomon, P. M.
المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 31(7):731-733 Jul, 2010
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
تدمد:07413106
15580563
DOI:10.1109/LED.2010.2048992