Fast growth rate GaAs and InGaP for MOCVD grown triple junction solar cells

التفاصيل البيبلوغرافية
العنوان: Fast growth rate GaAs and InGaP for MOCVD grown triple junction solar cells
المؤلفون: Ebert, C., Parekh, A., Pulwin, Z., Zhang, W., Lee, D., Byrnes, D.
المصدر: 2010 35th IEEE Photovoltaic Specialists Conference Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE. :002007-002011 Jun, 2010
Relation: 2010 35th IEEE Photovoltaic Specialists Conference (PVSC)
قاعدة البيانات: IEEE Xplore Digital Library