Study of threshold voltage modeling for small-scaled strained Si nMOSFET

التفاصيل البيبلوغرافية
العنوان: Study of threshold voltage modeling for small-scaled strained Si nMOSFET
المؤلفون: Qu Jiang-Tao, He-Ming, Zhang, Qin Shan-Shan, Xu Xiao-Bo, Hui-Yong, Hu
المصدر: 2011 International Conference on Electric Information and Control Engineering Electric Information and Control Engineering (ICEICE), 2011 International Conference on. :4507-4510 Apr, 2011
Relation: 2011 International Conference on Electric Information and Control Engineering (ICEICE)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781424480364
9781424480388
9781424480395
DOI:10.1109/ICEICE.2011.5777280