مؤتمر
Impact of quantum confinement on stress induced nMOSFET threshold voltage shift
| العنوان: | Impact of quantum confinement on stress induced nMOSFET threshold voltage shift |
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| المؤلفون: | Takashino, H., Tanizawa, M., Okagaki, T., Hayashi, T., Taya, M., Ishida, H., Ishikawa, K., Inoue, Y. |
| المصدر: | 2011 International Conference on Simulation of Semiconductor Processes and Devices Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference on. :107-110 Sep, 2011 |
| Relation: | 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781612844190 9781612844176 9781612844183 |
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| تدمد: | 19461569 19461577 |
| DOI: | 10.1109/SISPAD.2011.6035061 |