An Analytic Solution of Channel Potential and Drain Current for an Undoped Symmetric DG MOSFET Using SiO2 and High K Gate Dielectrics

التفاصيل البيبلوغرافية
العنوان: An Analytic Solution of Channel Potential and Drain Current for an Undoped Symmetric DG MOSFET Using SiO2 and High K Gate Dielectrics
المؤلفون: Baruah, Ratul Kr., Das, Sunando, Saikia, Pallabjyoti, Deka, Himangshu
المصدر: 2011 International Conference on Nanoscience, Technology and Societal Implications Nanoscience, Technology and Societal Implications (NSTSI), 2011 International Conference on. :1-5 Dec, 2011
Relation: 2011 International Conference on Nanoscience, Technology and Societal Implications (NSTSI)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781457720352
9781457720369
9781457720376
DOI:10.1109/NSTSI.2011.6112000