PMOSFET layout dependency with embedded SiGe Source/Drain at POLY and STI edge in 32/28nm CMOS technology

التفاصيل البيبلوغرافية
العنوان:	PMOSFET layout dependency with embedded SiGe Source/Drain at POLY and STI edge in 32/28nm CMOS technology
المؤلفون:	Song, L., Liang, Y., Onoda, H., Lai, C. W., Wallner, T. A., Pofelski, A., Gruensfelder, C., Josse, E., Okawa, T., Brown, J., Williams, R.Q., Holt, J., Weijtmans, J.W., Greene, B., Utomo, H. K., Lee, S. C., Nair, D., Zhang, Q., Zhu, C., Wu, X., Sherony, M., Lee, Y. M., Henson, W. K., Divakaruni, R., Kaste, E.
المصدر:	Proceedings of Technical Program of 2012 VLSI Technology, System and Application VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on. :1-2 Apr, 2012
Relation:	2012 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
قاعدة البيانات:	IEEE Xplore Digital Library