Integration of a stack of two fluorine doped silicon oxide thin films with interconnect metallization for a sub-0.35 /spl mu/m inter-metal dielectric applications

التفاصيل البيبلوغرافية
العنوان:	Integration of a stack of two fluorine doped silicon oxide thin films with interconnect metallization for a sub-0.35 /spl mu/m inter-metal dielectric applications
المؤلفون:	Baud, L., Passemard, G., Gobil, Y., M'Saad, H., Corte, A., Pires, F., Fugler, P., Noel, P., Rabinzohn, P., Beinglass, I.
المصدر:	European Workshop Materials for Advanced Metallization, Materials for advanced metallization Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop. :64-67 1997
Relation:	European Workshop Materials for Advanced Metallization. MAM'97 Abstracts Booklet
قاعدة البيانات:	IEEE Xplore Digital Library

الوصف
تدمد:	12660167
DOI:	10.1109/MAM.1997.621061