مؤتمر
Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures
العنوان: | Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures |
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المؤلفون: | Fantini, A., Wouters, D. J., Degraeve, R., Goux, L., Pantisano, L., Kar, G., Chen, Y.-Y., Govoreanu, B., Kittl, J. A., Altimime, L., Jurczak, M. |
المصدر: | 2012 4th IEEE International Memory Workshop Memory Workshop (IMW), 2012 4th IEEE International. :1-4 May, 2012 |
Relation: | 2012 4th IEEE International Memory Workshop (IMW) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9781467310796 9781467310819 |
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تدمد: | 2159483X 21594864 |
DOI: | 10.1109/IMW.2012.6213646 |