مؤتمر
Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures
| العنوان: | Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures |
|---|---|
| المؤلفون: | Fantini, A., Wouters, D. J., Degraeve, R., Goux, L., Pantisano, L., Kar, G., Chen, Y.-Y., Govoreanu, B., Kittl, J. A., Altimime, L., Jurczak, M. |
| المصدر: | 2012 4th IEEE International Memory Workshop Memory Workshop (IMW), 2012 4th IEEE International. :1-4 May, 2012 |
| Relation: | 2012 4th IEEE International Memory Workshop (IMW) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
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