دورية أكاديمية
Effect of dopant redistribution, segregation, and carrier trapping in As-implanted MOS gates
العنوان: | Effect of dopant redistribution, segregation, and carrier trapping in As-implanted MOS gates |
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المؤلفون: | Batra, S., Park, K., Lin, J., Yoganathan, S., Lee, J.C., Banerjee, S.K., Sun, S.W., Lux, G. |
المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 37(11):2322-2330 Nov, 1990 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 00189383 15579646 |
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DOI: | 10.1109/16.62295 |