مؤتمر
ESD characterization of high mobility SiGe Quantum Well and Ge devices for future CMOS scaling
| العنوان: | ESD characterization of high mobility SiGe Quantum Well and Ge devices for future CMOS scaling |
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| المؤلفون: | Hellings, Geert, Linten, Dimitri, Thijs, Steven, Chen, Shih-Hung, Witters, Liesbeth, Mitard, Jerome, Zografos, Odysseas, Groeseneken, Guido |
| المصدر: | Electrical Overstress / Electrostatic Discharge Symposium Proceedings 2012 Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2012 34th. :1-6 Sep, 2012 |
| Relation: | 2012 34th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781467314671 9781585372102 9781585372188 |
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| تدمد: | 07395159 21649340 |