مؤتمر
A simulation about the influence of the gate-source-drain distance on the AlGaN/GaN HEMT performance at Ka-band
| العنوان: | A simulation about the influence of the gate-source-drain distance on the AlGaN/GaN HEMT performance at Ka-band |
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| المؤلفون: | Dechun, Guo, Kankan, Qi, Junfeng, Cui, Xiaobin, Luo, Chao, Yue |
| المصدر: | 2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International. :1-4 Sep, 2012 |
| Relation: | 2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781467309035 9781467309011 9781467309042 |
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| DOI: | 10.1109/IMWS2.2012.6338225 |