مؤتمر
Influence Of The Device Geometry And Inhomogeneity On The Electrostatic Discharge Sensitivity Of InGaAs/InP Avalanche Photodetectors
| العنوان: | Influence Of The Device Geometry And Inhomogeneity On The Electrostatic Discharge Sensitivity Of InGaAs/InP Avalanche Photodetectors |
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| المؤلفون: | Neitzert, H.-C., Cappa, V., Crovato, R. |
| المصدر: | Proceedings Electrical Overstress/Electrostatic Discharge Symposium Electrical overstress/electrostatic discharge symposium Electrical Overstress/Electrostatic Discharge Symposium,1997. Proceedings. :18-26 1997 |
| Relation: | Proceedings of 18th Annual Electrical Overstress/Electrostatic Discharge Symposium |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 1878303791 9781878303790 1878303694 9781878303691 |
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| DOI: | 10.1109/EOSESD.1997.634222 |