دورية أكاديمية
Mechanism for Leakage Reduction by La Incorporation in a $\hbox{HfO}_{2}\hbox{/SiO}_{2}\hbox{/Si}$ Gate Stack
| العنوان: | Mechanism for Leakage Reduction by La Incorporation in a $\hbox{HfO}_{2}\hbox{/SiO}_{2}\hbox{/Si}$ Gate Stack |
|---|---|
| المؤلفون: | Manabe, K., Watanabe, K., Jagannathan, H., Paruchuri, V. K. |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 34(3):348-350 Mar, 2013 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
|---|---|
| DOI: | 10.1109/LED.2013.2242040 |