Comprehensive study of interface passivation in Ge-MOSFETs — Control the interfacial layer for high performance devices

التفاصيل البيبلوغرافية
العنوان: Comprehensive study of interface passivation in Ge-MOSFETs — Control the interfacial layer for high performance devices
المؤلفون: Wang, Sheng Kai, Xue, Bai-Qing, Sun, Bing, Liang, Hui-Li, Mei, Zeng-Xia, Zhao, Wei, Du, Xiao-Long, Liu, Hong-Gang
المصدر: 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on. :1-3 Oct, 2012
Relation: 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
قاعدة البيانات: IEEE Xplore Digital Library